Ion beam induced charge gate rupture of oxide on 6H-SiC

Lee, K. K.; Nishijima, Toshiji*; Oshima, Takeshi; Jamieson, D. N.*

Nuclear Instruments and Methods in Physics Research B, 181(1-4), p.324 - 328, 2001/07

https://doi.org/10.1016/S0168-583X(01)00622-X

Investigation of oxide charge trapping and interface state generation in SiO grown on 6H-SiC was performed using ion beam induced charge (IBIC), electroluminescence (EL) and the high frequency capacitance-voltage (CV) method. A large flatband voltage shift in CV measurements indicated a high density of positive charges trapped near the SiC/SiO interface. These trapped charges were related to defects either existing in the oxide or generated during alpha particle irradiation. EL indicated trap levels at 1.36, 1.6, 2.3 and 2.9 eV. Levels at 1.36 and 2.3 eV are defects existing in the SiC substrate, while the other two remaining levels are due to defects in the oxide. These defects affected the radiation hardness of SiC electronic devices. Oxide rupture caused by alpha particle irradiation of the metal-oxide-p-type SiC device is observed.